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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25C (1) JAN JANTX JANTXV JANS Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 60 60 6.0 50 360 -65 to +200 Unit Vdc Vdc Vdc mAdc mW C TO-18 (TO-206AA) 2N2484 Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2484 2N2484UA 2N2484UB, UBC 1. See 19500/376 for Thermal Performance Curves. 2N2484UA Symbol RJA Value 325 275 350 Unit C/W ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Current VCE = 45Vdc Collector-Base Cutoff Current VCB = 45Vdc VCB = 60Vdc Collector-Emitter Cutoff Current VCE = 5.0Vdc V(BR)CEO ICES 60 5.0 5.0 10 2.0 Vdc Adc Adc Adc Adc 2N2484UB, UBC (UBC = Ceramic Lid Version) Symbol Min. Max. Unit ICBO ICEO T4-LDS-0058 Rev. 1 (080853) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 1.0Adc, VCE = 5.0Vdc IC = 10Adc, VCE = 5.0Vdc IC = 100Adc, VCE = 5.0Vdc IC = 500Adc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 1.0mAdc, IB = 100Adc Base-Emitter Voltage VCE = 5.0Vdc, IC = 100Adc 45 200 225 250 250 225 500 675 800 800 800 Adc Adc Symbol Min. Max. Unit IEBO 2.0 10 hFE VCE(sat) VBE(ON) 0.5 0.3 Vdc 0.7 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio IC = 50Adc, VCE = 5.0Vdc, f = 5.0MHz IC = 500Adc, VCE = 5.0Vdc, f = 30MHz Open Circuit Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz Open Circuit Reverse-Voltage Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz Input Impedance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz f 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. |hfe| 3.0 2.0 0.7 40 8.0 x 10-4 3.5 250 24 900 5.0 6.0 pF pF mhos Symbol Min. Max. Unit hoe hre hje hfe Cobo Cibo k T4-LDS-0058 Rev. 1 (080853) Page 2 of 2 |
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